Formation and plasmonic properties of silicon nanowire arrays produced by chemical etching

S. M. Prokes; Hua Qi; Jenny Yung; Orest Glembocki

doi:10.1117/12.859825

27 August 2010 Formation and plasmonic properties of silicon nanowire arrays produced by chemical etching

S. M. Prokes, Hua Qi, Jenny Yung, Orest Glembocki

Proceedings Volume 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II; 77680M (2010) https://doi.org/10.1117/12.859825
Event: SPIE NanoScience + Engineering, 2010, San Diego, California, United States

Abstract

We have investigated the formation of silicon nanowire arrays by the use of a simple chemical etching approach. The etching characteristics of silicon nanowire arrays using wafers with diverse doping levels and several orientations have been examined. Furthermore, the etching solution, etching time and temperature were also considered in order to optimize the etching conditions to produce thinner and more orderly silicon nanowire arrays in registry with the substrate. Since this process takes advantage of a silver catalyst, we have also investigated various ways of forming the initial silver catalyst on the silicon surfaces, and we show that electroless Ag deposition, as well as e-beam thin film deposition of Ag, results in successful, highly aligned and ordered Si nanowire arrays after the etching step. In addition, we have also performed Surfaced Enhanced Raman Scattering (SERS) measurements on the nanowire arrays and on nanowires removed from the substrate.

Citation Download Citation

S. M. Prokes, Hua Qi, Jenny Yung, and Orest Glembocki "Formation and plasmonic properties of silicon nanowire arrays produced by chemical etching", Proc. SPIE 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II, 77680M (27 August 2010); https://doi.org/10.1117/12.859825

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