27 August 2010 In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices
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Abstract
We demonstrate a post-growth in-situ chlorine passivation for suppressing surface-dominant transport in Si nanowires (SiNWs). The leakage current of bridged SiNWs suppressed more than five orders of magnitude as a result of chlorine passivation while the shape and structural properties of the bridging NWs remain unaffected by the post-growth in-situ HCl passivation. The chlorine passivated SiNW surfaces were found to be beneficial to enhance the high immunity to environmental degradation.
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Ja-Yeon Kim, Ja-Yeon Kim, Min-Ki Kwon, Min-Ki Kwon, Logeeswaran V. J., Logeeswaran V. J., Sonia Grego, Sonia Grego, M. Saif Islam, M. Saif Islam, } "In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices", Proc. SPIE 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II, 77680R (27 August 2010); doi: 10.1117/12.861607; https://doi.org/10.1117/12.861607
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