24 August 2010 Band structure engineering of ZnO1-xSex alloys
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Abstract
ZnO1-xSex films have been prepared through pulsed laser deposition as a step toward stable films with a band gap appropriate for water splitting. The films show a clear red shift in absorption with increasing Se content and a shift in the flat band voltage toward spontaneity. Due to the films' electron affinities, there exists a natural tunnel junction between these n- ZnO1-xSex films when grown on the p-side of a Si diode. The overall performance, emphasized by flat band potential measurements, can be improved by growing films on Si p-n diodes.
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Marie A. Mayer, Derrick T. Speaks, Kin Man Yu, Samuel S. Mao, Eugene E. Haller, Wladek Walukiewicz, "Band structure engineering of ZnO1-xSex alloys", Proc. SPIE 7770, Solar Hydrogen and Nanotechnology V, 77700C (24 August 2010); doi: 10.1117/12.859482; https://doi.org/10.1117/12.859482
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