24 August 2010 Band structure engineering of ZnO1-xSex alloys
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ZnO1-xSex films have been prepared through pulsed laser deposition as a step toward stable films with a band gap appropriate for water splitting. The films show a clear red shift in absorption with increasing Se content and a shift in the flat band voltage toward spontaneity. Due to the films' electron affinities, there exists a natural tunnel junction between these n- ZnO1-xSex films when grown on the p-side of a Si diode. The overall performance, emphasized by flat band potential measurements, can be improved by growing films on Si p-n diodes.
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Marie A. Mayer, Marie A. Mayer, Derrick T. Speaks, Derrick T. Speaks, Kin Man Yu, Kin Man Yu, Samuel S. Mao, Samuel S. Mao, Eugene E. Haller, Eugene E. Haller, Wladek Walukiewicz, Wladek Walukiewicz, } "Band structure engineering of ZnO1-xSex alloys", Proc. SPIE 7770, Solar Hydrogen and Nanotechnology V, 77700C (24 August 2010); doi: 10.1117/12.859482; https://doi.org/10.1117/12.859482

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