Research of ZnS as a buffer layer for CIGS solar cells

Hsin-Wei Huang; Sheng-Hui Chen; Cheng-Chung Lee

doi:10.1117/12.860410

8 September 2010 Research of ZnS as a buffer layer for CIGS solar cells

Hsin-Wei Huang, Sheng-Hui Chen, Cheng-Chung Lee

Proceedings Volume 7771, Thin Film Solar Technology II; 77710Q (2010) https://doi.org/10.1117/12.860410
Event: SPIE Solar Energy + Technology, 2010, San Diego, California, United States

Abstract

Normally, CdS film is used as the buffer layer in the fabrication of copper indium gallium selenide solar cells. These solar cells can reach an efficiency of 10.3% when produced by a non-vacuum process. However, this is a very toxic process. In this study, we propose using a nontoxic zinc sulfide (ZnS) buffer layer which is deposited by chemical bath deposition. It took only 15 minutes to reach a ZnS thickness of 50nm and the transmittance of the finished device was higher than 80%. The back contact of the Mo layer sheet resistivity is 0.22 (Ω/square). The precursor solution for the cell fabrication was prepared from anhydrous hydrazine. The film was then deposited by spraying and finally heated rapidly to 520 without external selenization.

Citation Download Citation

Hsin-Wei Huang, Sheng-Hui Chen, and Cheng-Chung Lee "Research of ZnS as a buffer layer for CIGS solar cells", Proc. SPIE 7771, Thin Film Solar Technology II, 77710Q (8 September 2010); https://doi.org/10.1117/12.860410

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