Paper
19 August 2010 Fabrication and characterisation of silicon quantum dots in SiO2/Si3N4 hybrid matrix
Dawei Di, Ivan Perez-Wurfl, Gavin Conibeer, Martin A. Green
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Abstract
Si quantum dots in SiO2/Si3N4 hybrid matrix on quartz substrates were fabricated by magnetron sputtering of alternating silicon rich oxide and Si3N4 layers followed by different post-deposition anneals. X-ray diffraction results indicate that the average dimension of the Si QDs ranges from 1.6 to 5.2 nm. The size and crystallisation of the Si nanocrystals are dependent on a number of factors, including the annealing condition, the SRO thickness and the Si3N4 barrier thickness, as evidenced in XRD and Raman measurements. In particular, thicker Si3N4 barrier layers seem to be able to suppress the growth of Si nanocrystals more effectively. PL measurements indicate that the apparent bandgap of the samples investigated in this work is in the range 1.12-1.67 eV, which demonstrates the effect of quantum confinement. More interestingly, analysis of the PL data reveals that the PL peak energy does not only depend on the size of the nanocrystals, but also affected by other details of the nanocrystal formation. A simple core-shell model is constructed to illustrate our explanation. These findings offer a preliminary understanding of the nanocrystal growth and radiative recombination processes in this newly synthesized material.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dawei Di, Ivan Perez-Wurfl, Gavin Conibeer, and Martin A. Green "Fabrication and characterisation of silicon quantum dots in SiO2/Si3N4 hybrid matrix", Proc. SPIE 7772, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion, 77720J (19 August 2010); https://doi.org/10.1117/12.859715
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Cited by 3 scholarly publications.
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KEYWORDS
Silicon

Nanocrystals

Quantum dots

Annealing

Crystals

Quantum dot light emitting diodes

Raman spectroscopy

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