18 August 2010 Solution processed OTFTs for OLED backplanes: development of high performance short channel length devices
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Proceedings Volume 7778, Organic Field-Effect Transistors IX; 777811 (2010); doi: 10.1117/12.860366
Event: SPIE Photonic Devices + Applications, 2010, San Diego, California, United States
Abstract
High performance short channel OTFTs with field effect mobilities greater than 1cm2V-1s-1 have been developed for OLED driver applications incorporating soluble crystalline semiconductor materials. We highlight the impact of contact resistance on the mobility in these devices and show by functionalising both the source and drain contacts and channel regions in a top gate bottom contact device architecture that the mobility can be significantly improved. Our approach also includes the optimisation of solvent selection from which the semiconductor material is deposited in order to enhance crystalline domain formation.
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Christopher J. Newsome, Richard J. Wilson, Thomas J. Kugler, Mohd K. Othman, Jeremy H. Burroughes, "Solution processed OTFTs for OLED backplanes: development of high performance short channel length devices", Proc. SPIE 7778, Organic Field-Effect Transistors IX, 777811 (18 August 2010); doi: 10.1117/12.860366; https://doi.org/10.1117/12.860366
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KEYWORDS
Resistance

Electrodes

Crystals

Semiconductors

Glasses

Organic light emitting diodes

Ozone

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