26 August 2010 Thinning of PLZT ceramic wafers for sensor integration
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Proceedings Volume 7780, Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon; 77800K (2010); doi: 10.1117/12.858610
Event: SPIE NanoScience + Engineering, 2010, San Diego, California, United States
Characteristics of transparent PLZT ceramics can be tailored by controlling the component of them, and therefore showed excellent dielectric, piezoelectric, pyroelectric and ferroelectric properties. To integrate the ceramics with microelectronic circuit to realize integrated applications, the ceramic wafers have to be thinned down to micrometer scale in thickness. A7/65/35 PLZT ceramic wafer was selected in this study for the thinning process. Size of the wafer was 10×10mm with an initial thickness of 300μm. A novel membrane transfer process (MTP) was developed for the thinning and integration of the ceramic wafers. In the MTP process, the ceramic wafer was bonded to silicon wafer using a polymer bonding method. Mechanical grinding method was applied to reduce the thickness of the ceramic. To minimize the surface damage in the ceramic wafer caused by the mechanical grinding, magnetorheological finishing (MRF) method was utilized to polish the wafer. White light interference (WLI) apparatus was used to monitor the surface qualities of the grinded and ploished ceramic wafers. For the PLZT membrane obtained from the MTP process, the final thickness of the thinned and polished wafer was 10μm, the surface roughness was below 1nm in rms, and the flatness was better than λ/5.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Na Jin, Weiguo Liu, "Thinning of PLZT ceramic wafers for sensor integration", Proc. SPIE 7780, Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon, 77800K (26 August 2010); doi: 10.1117/12.858610; https://doi.org/10.1117/12.858610

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