17 August 2010 III-nitride-based avalanche photo detectors
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Research into III-Nitride based avalanche photodiodes (APDs) is motivated by the need for high sensitivity ultraviolet (UV) detectors in numerous civilian and military applications. By designing III-Nitride photodetectors that utilize low-noise impact ionization high internal gain can be realized-GaN APDs operating in Geiger mode can achieve gains exceeding 1×107. Thus with careful design, it becomes possible to count photons at the single photon level. In this paper we review the current state of the art in III-Nitride visible-blind APDs and discuss the critical design choices necessary to achieve high performance Geiger mode devices. Other major technical issues associated with the realization of visible-blind Geiger mode APDs are also discussed in detail and future prospects for improving upon the performance of these devices are outlined. The photon detection efficiency, dark count rate, and spectral response of or most recent Geiger-mode GaN APDs on free-standing GaN substrates are studied under low photon fluxes, with single photon detection capabilities being demonstrated. We also present our latest results regarding linear mode gain uniformity: the study of gain uniformity helps reveal the spatial origins of gain so that we can better understand the role of defects.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ryan McClintock, Ryan McClintock, Erdem Cicek, Erdem Cicek, Zahra Vashaei, Zahra Vashaei, Can Bayram, Can Bayram, Manijeh Razeghi, Manijeh Razeghi, Melville P. Ulmer, Melville P. Ulmer, } "III-nitride-based avalanche photo detectors", Proc. SPIE 7780, Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon, 77801B (17 August 2010); doi: 10.1117/12.863962; https://doi.org/10.1117/12.863962


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III-nitride avalanche photodiodes
Proceedings of SPIE (February 01 2007)
III-nitride avalanche photodiodes
Proceedings of SPIE (January 25 2009)

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