18 August 2010 Pyroelectric photodetector based on ferroelectric crystal-semiconductor thin film heterostructure
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Abstract
Very important advantage of ZnO thin films is an opportunity of use in the composite heterostructures opening opportunities for development of ZnO-based optoelectronics devices. In this work we report the preparation of ferroelectric crystal - ZnO thin film heterostructures by vacuum deposition method and creation of new type of pyroelectric photodetector. The ferroelectric field effect transistor has been prepared using ZnO:Li films as transistor channel and LiNbO3 and TGS crystals as pyroelectric sensitive element. The photoelectric properties (currents ratio, charge carriers mobility, ampere-watt sensitivity in IR diapason, NEP sensitivity, and photocurrent kinetics) of prepared heterostructures were investigated and first samples of novel pyroelectric photodetector with high sensitivity and detectability were prepared.
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Armen Poghosyan, Armen Poghosyan, N. R. Aghamalyan, N. R. Aghamalyan, R. Guo, R. Guo, R. K. Hovsepyan, R. K. Hovsepyan, E. S. Vardanyan, E. S. Vardanyan, } "Pyroelectric photodetector based on ferroelectric crystal-semiconductor thin film heterostructure", Proc. SPIE 7781, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV, 778117 (18 August 2010); doi: 10.1117/12.863037; https://doi.org/10.1117/12.863037
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