18 August 2010 Reactor pressure: growth temperature relation for InN epilayers grown by high-pressure CVD
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Abstract
Results on the achievable growth temperature as a function of the reactor pressure for the growth of InN by high-pressure CVD are presented. As the reactor pressure was increased from 1 bar to 19 bar, the optimal growth temperature raised from 759°C to 876°C, an increase of 6.6 °C/bar. The InN layers were grown in a horizontal flow channel reactor, using a pulsed precursor injection scheme. The structural and optical properties of the epilayers have been investigated by Raman spectroscopy, X-ray diffraction, and IR reflectance spectroscopy.
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M. Buegler, M. Buegler, S. Gamage, S. Gamage, R. Atalay, R. Atalay, J. Wang, J. Wang, I. Senevirathna, I. Senevirathna, R. Kirste, R. Kirste, T. Xu, T. Xu, M. Jamil, M. Jamil, I. Ferguson, I. Ferguson, J. Tweedie, J. Tweedie, R. Collazo, R. Collazo, A. Hoffmann, A. Hoffmann, Z. Sitar, Z. Sitar, N. Dietz, N. Dietz, "Reactor pressure: growth temperature relation for InN epilayers grown by high-pressure CVD", Proc. SPIE 7784, Tenth International Conference on Solid State Lighting, 77840F (18 August 2010); doi: 10.1117/12.860952; https://doi.org/10.1117/12.860952
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