Broad area side emission LED for high power application

J. H. Teng; N. S. S. Ang; S. J. Chua; W. Liu

doi:10.1117/12.861154

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18 August 2010 Broad area side emission LED for high power application

J. H. Teng, N. S. S. Ang, S. J. Chua, W. Liu

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Proceedings Volume 7784, Tenth International Conference on Solid State Lighting; 77840G (2010) https://doi.org/10.1117/12.861154
Event: SPIE Optical Engineering + Applications, 2010, San Diego, California, United States

Abstract

Larger chip size with higher injection current is used in high power and high brightness LEDs. Thermal management and good current spreading are critical issues in these high power applications, besides the requirement on higher internal and external quantum efficiency. The conventional top emitting configuration is not suitable because of the poor thermal conductivity of the sapphire substrate and poor light extraction efficiency. The substrate removal and flip-chip methods can provide much better heat dissipation but having concerns on the yield. In this paper, we reported a broad area side emission LEDs (BSLED) with a large length to width ratio of 5000um to 500um so as to have a comparable light emitting area with top/back emission LEDs in the same amount of GaN wafer area. Both top and backside of wafer are coated with metals as mirror reflectors and are attached to heat sinks for better heat dissipation. The L-I, I-V and polarization characteristics from fabricated BSLED showed it is more promising than conventional top emitting LED at the same size. The BSLED provides more flexibility in lighting device design and could be more suitable for certain application like LCD backlighting.

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J. H. Teng, N. S. S. Ang, S. J. Chua, and W. Liu "Broad area side emission LED for high power application", Proc. SPIE 7784, Tenth International Conference on Solid State Lighting, 77840G (18 August 2010); https://doi.org/10.1117/12.861154

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