Optical, structural properties and experimental procedures of GaGdN grown by metalorganic chemical vapor deposition

I-Hsiang Hung; Yu-Hsiang Lai; Zhe Chuan Feng; Shalini Gupta; Tahir Zaidi; Ian Ferguson; Weijie Lu

doi:10.1117/12.859107

18 August 2010 Optical, structural properties and experimental procedures of GaGdN grown by metalorganic chemical vapor deposition

I-Hsiang Hung, Yu-Hsiang Lai, Zhe Chuan Feng, Shalini Gupta, Tahir Zaidi, Ian Ferguson, Weijie Lu

Author Affiliations +

Proceedings Volume 7784, Tenth International Conference on Solid State Lighting; 77840H (2010) https://doi.org/10.1117/12.859107
Event: SPIE Optical Engineering + Applications, 2010, San Diego, California, United States

Abstract

Rare earth (RE) elements are promising alternatives to transition metals (TMs) for use in developing a dilute magnetic semiconductor (DMS) for spintronics applications. Instead of relying on the d-shell electrons of the TMs as the magnetic element, the 4f electrons from the RE elements are used. The 4f RE elements can have larger magnetic moments as compared to 3d TMs, because the 4f orbits are localized and the direct coupling between the 4f ions is weak. There have been several reports of using RE elements for optoelectronic applications, as their various internal f-shell electronic transitions vary in energy from infrared to visible.

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I-Hsiang Hung, Yu-Hsiang Lai, Zhe Chuan Feng, Shalini Gupta, Tahir Zaidi, Ian Ferguson, and Weijie Lu "Optical, structural properties and experimental procedures of GaGdN grown by metalorganic chemical vapor deposition", Proc. SPIE 7784, Tenth International Conference on Solid State Lighting, 77840H (18 August 2010); https://doi.org/10.1117/12.859107

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