18 August 2010 Thermal transient characteristics of flip chip high power light emitting diodes
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Proceedings Volume 7784, Tenth International Conference on Solid State Lighting; 77840T (2010); doi: 10.1117/12.861083
Event: SPIE Optical Engineering + Applications, 2010, San Diego, California, United States
Abstract
The die-attached quality and the thermal transient characteristics of high power flip chip light emitting diodes (LEDs) are investigated using thermal transient tester. Various die-attached materials were utilized to compare the difference in their thermal resistances and long term performance. By applying accelerated aging stress, the deterioration rates at the die-attached layers were obtained. Numerical simulation provided further understanding of LED device temperature distribution and also revealed that the thermal variance at the die-attached interface can be recognized within only few milliseconds for the flip chip structure. The effects of bump arrangement and material were analyzed to achieve high temperature uniformity and low thermal resistance for high power LEDs.
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Chien-Ping Wang, Tzung-Te Chen, Shih-Chun Yang, Han-Kuei Fu, An-Tse Lee, Pei-Ting Chou, Chien-Jen Sun, Chiu-Ling Chen, Mu-Tao Chu, "Thermal transient characteristics of flip chip high power light emitting diodes", Proc. SPIE 7784, Tenth International Conference on Solid State Lighting, 77840T (18 August 2010); doi: 10.1117/12.861083; https://doi.org/10.1117/12.861083
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KEYWORDS
Light emitting diodes

Resistance

Interfaces

Numerical simulations

Aluminum

Gold

Epoxies

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