23 August 2010 Rutherford backscattering and optical studies for ZnO thin films on sapphire substrates grown by metalorganic chemical vapor deposition
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Abstract
A series of ZnO thin films with different thicknesses grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) have been studied by different characterization techniques. The optical properties are investigated by photoluminescence (PL), optical transmission (OT) and 1st order derivatives, various angle scanning ellipsometry (VASE). Rutherford Backscattering (RBS) shows the atomic Zn:O ratios with a few percentage aviation from 1:1, and thicknesses in range of 10~230 nm, roughness layer with 10~30nm, which are corresponding to results from atomic force microscopy (AFM), and scanning electron microscopy (SEM). The optical and structure characterization measurements have confirmed the good quality of these epitaxial ZnO materials.
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Yee Ling Chung, Lin Li, Shude Yao, Zhe Chuan Feng, William E. Fenwick, Tahir Zaidi, Ian T. Ferguson, Weijie Lu, "Rutherford backscattering and optical studies for ZnO thin films on sapphire substrates grown by metalorganic chemical vapor deposition", Proc. SPIE 7784, Tenth International Conference on Solid State Lighting, 778416 (23 August 2010); doi: 10.1117/12.859109; https://doi.org/10.1117/12.859109
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