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19 August 2010 Improving the optical and electrical properties of fluorine-doped tin oxide films by various post-annealing treatments
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Abstract
Transparent conducting Fluorine-doped tin oxide (FTO) thin films were deposited on glass substrates by pulsed DC magnetron sputtering from cost saving metal targets. We observed lower resistivity and higher average transmittance in the visible range after the application of various post heating treatments. The electrical and optical properties of FTO films were investigated. When the annealing temperature is 400°C in air, the average transmittance is 79.79% with the lowest resistivity of 1.38×10-3 Ω-cm, carrier density of 2.27×1020 cm-3 and mobility of 20 cm2/ V-s. When the annealing temperature is 400°Cin a H2 5%+N2 95% atmosphere, the average transmittance is 79.75 % with the lowest resistivity of 1.26×10-3 Ω-cm, carrier density of 2.17×1020 cm-3 and mobility of 22.8 cm2/ V-s. When the annealing temperature is 350 °C in vacuum, the average transmittance is 80.48% with the lowest resistivity of 1.23×10-3 Ω-cm, carrier density of 4.40×1020 cm-3 and mobility of 11.6 cm2/ V-s.
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Pin-Jen Chen, Bo-Huei Liao, Chien-Cheng Kuo, and Cheng-Chung Lee "Improving the optical and electrical properties of fluorine-doped tin oxide films by various post-annealing treatments", Proc. SPIE 7786, Current Developments in Lens Design and Optical Engineering XI; and Advances in Thin Film Coatings VI, 77860Q (19 August 2010); https://doi.org/10.1117/12.860492
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