Electro-chromic device with GZO as a conductive layer

Chih-Chao Chan; Chien-Jen Tang; Kun-Hsien Lee; Cheng-Chung Jaing; Chien-Cheng Kuo; Hsi-Chao Chen; Cheng-Chung Lee

doi:10.1117/12.860499

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19 August 2010 Electro-chromic device with GZO as a conductive layer

Chih-Chao Chan, Chien-Jen Tang, Kun-Hsien Lee, Cheng-Chung Jaing, Chien-Cheng Kuo, Hsi-Chao Chen, Cheng-Chung Lee

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Proceedings Volume 7786, Current Developments in Lens Design and Optical Engineering XI; and Advances in Thin Film Coatings VI; 77860S (2010) https://doi.org/10.1117/12.860499
Event: SPIE Optical Engineering + Applications, 2010, San Diego, California, United States

Abstract

Thin films of tungsten oxide (WO3) were deposited on GZO-coated B270 glass substrates and thin films of Ta₂O₅ were deposited on B270 glass substrates by electron beam gun evaporation at high vacuum pressure of 3×10^-5 Torr and varied oxygen pressures ranging from 1.0×10^-4 to 6.0×10^-4 Torr. The optical properties of the electro-chromic (EC) film were measured by a spectrophotometer. The optical modulation (ΔT) of the tungsten oxide thin film deposited at an oxygen pressure of 1.0×10^-4 Torr was found to be ΔT = 67.46% at λ=550nm. The optimum optical properties for deposition of Ta₂O₅ were attained at an oxygen pressure of 4x10^-4 Torr. Gallium doped zinc oxide (GZO) was used as a conductive layer instead of ITO. A five layer EC device (Glass/GZO/WO₃/Ta₂O₅/NiO/Al) has been design and fabricated.

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Chih-Chao Chan, Chien-Jen Tang, Kun-Hsien Lee, Cheng-Chung Jaing, Chien-Cheng Kuo, Hsi-Chao Chen, and Cheng-Chung Lee "Electro-chromic device with GZO as a conductive layer", Proc. SPIE 7786, Current Developments in Lens Design and Optical Engineering XI; and Advances in Thin Film Coatings VI, 77860S (19 August 2010); https://doi.org/10.1117/12.860499

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