7 September 2010 Contaminant film deposition on VUV-modified surfaces
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Abstract
Mechanisms for molecular contaminant droplet formation are investigated. The tendency for droplet formation is evaluated in terms of the surface tension of the liquid-like outgassed species and the surface energy of the collector. Results are presented indicating that VUV irradiation of the surface prior to contaminant deposition eliminates some droplet formation completely. This finding is discussed in terms of the removal of hydrocarbon and carbonyl-structured compounds from oxidized silicon surfaces.
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Dianne J. Coleman, Dianne J. Coleman, Kenneth T. Luey, Kenneth T. Luey, } "Contaminant film deposition on VUV-modified surfaces", Proc. SPIE 7794, Optical System Contamination: Effects, Measurements, and Control 2010, 779409 (7 September 2010); doi: 10.1117/12.860729; https://doi.org/10.1117/12.860729
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