6 October 2010 Stress analysis of Mo, MoSi2 and Si mono-layer thin films and multilayers prepared by magnetron sputtering
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Abstract
To improve the stress property of multilayer optics working in extreme ultraviolet and x-ray range, mono-layer thin films of Mo, MoSi2, Si, with thickness of 100nm, and periodic multilayers of [Mo/Si]20, [MoSi2/Si]20, with period thickness of 20nm, were prepared by direct current magnetron sputtering method. Before and after each deposition, the radius of surface curvatures of substrates were measured using a stylus profiler and then the film stress was calculated. The measurement results indicate that, Mo, MoSi2 and Si mono-layer thin films all shows compressive stress, while Mo/Si multilayer shows tensile stress, i.e., the film stress changes significantly during Mo/Si multilayer growth. For MoSi2/Si multilayer, the film stress still keeps compressive, which indicates more stable stress property.
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Jingtao Zhu, Qiushi Huang, Haochuan Li, Fengli Wang, Xiaoqiang Wang, Zhanshan Wang, Lingyan Chen, "Stress analysis of Mo, MoSi2 and Si mono-layer thin films and multilayers prepared by magnetron sputtering", Proc. SPIE 7802, Advances in X-Ray/EUV Optics and Components V, 78020E (6 October 2010); doi: 10.1117/12.860268; https://doi.org/10.1117/12.860268
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