6 October 2010 Stress analysis of Mo, MoSi2 and Si mono-layer thin films and multilayers prepared by magnetron sputtering
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To improve the stress property of multilayer optics working in extreme ultraviolet and x-ray range, mono-layer thin films of Mo, MoSi2, Si, with thickness of 100nm, and periodic multilayers of [Mo/Si]20, [MoSi2/Si]20, with period thickness of 20nm, were prepared by direct current magnetron sputtering method. Before and after each deposition, the radius of surface curvatures of substrates were measured using a stylus profiler and then the film stress was calculated. The measurement results indicate that, Mo, MoSi2 and Si mono-layer thin films all shows compressive stress, while Mo/Si multilayer shows tensile stress, i.e., the film stress changes significantly during Mo/Si multilayer growth. For MoSi2/Si multilayer, the film stress still keeps compressive, which indicates more stable stress property.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jingtao Zhu, Jingtao Zhu, Qiushi Huang, Qiushi Huang, Haochuan Li, Haochuan Li, Fengli Wang, Fengli Wang, Xiaoqiang Wang, Xiaoqiang Wang, Zhanshan Wang, Zhanshan Wang, Lingyan Chen, Lingyan Chen, } "Stress analysis of Mo, MoSi2 and Si mono-layer thin films and multilayers prepared by magnetron sputtering", Proc. SPIE 7802, Advances in X-Ray/EUV Optics and Components V, 78020E (6 October 2010); doi: 10.1117/12.860268; https://doi.org/10.1117/12.860268


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