Stress analysis of Mo, MoSi2 and Si mono-layer thin films and multilayers prepared by magnetron sputtering

Jingtao Zhu; Qiushi Huang; Haochuan Li; Fengli Wang; Xiaoqiang Wang; Zhanshan Wang; Lingyan Chen

doi:10.1117/12.860268

6 October 2010 Stress analysis of Mo, MoSi₂ and Si mono-layer thin films and multilayers prepared by magnetron sputtering

Jingtao Zhu, Qiushi Huang, Haochuan Li, Fengli Wang, Xiaoqiang Wang, Zhanshan Wang, Lingyan Chen

Author Affiliations +

Proceedings Volume 7802, Advances in X-Ray/EUV Optics and Components V; 78020E (2010) https://doi.org/10.1117/12.860268
Event: SPIE Optical Engineering + Applications, 2010, San Diego, California, United States

Abstract

To improve the stress property of multilayer optics working in extreme ultraviolet and x-ray range, mono-layer thin films of Mo, MoSi2, Si, with thickness of 100nm, and periodic multilayers of [Mo/Si]₂₀, [MoSi₂/Si]₂₀, with period thickness of 20nm, were prepared by direct current magnetron sputtering method. Before and after each deposition, the radius of surface curvatures of substrates were measured using a stylus profiler and then the film stress was calculated. The measurement results indicate that, Mo, MoSi₂ and Si mono-layer thin films all shows compressive stress, while Mo/Si multilayer shows tensile stress, i.e., the film stress changes significantly during Mo/Si multilayer growth. For MoSi₂/Si multilayer, the film stress still keeps compressive, which indicates more stable stress property.

Citation Download Citation

Jingtao Zhu, Qiushi Huang, Haochuan Li, Fengli Wang, Xiaoqiang Wang, Zhanshan Wang, and Lingyan Chen "Stress analysis of Mo, MoSi₂ and Si mono-layer thin films and multilayers prepared by magnetron sputtering", Proc. SPIE 7802, Advances in X-Ray/EUV Optics and Components V, 78020E (6 October 2010); https://doi.org/10.1117/12.860268

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