Study on thermal annealing of cadmium zinc telluride (CZT) crystals

G. Yang; A. E. Bolotnikov; P. M. Fochuk; G. S. Camarda; Y. Cui; A. Hossain; K. Kim; J. Horace; B. McCall; R. Gul; L. Xu; O. V. Kopach; R. B. James

doi:10.1117/12.861372

27 August 2010 Study on thermal annealing of cadmium zinc telluride (CZT) crystals

G. Yang, A. E. Bolotnikov, P. M. Fochuk, G. S. Camarda, Y. Cui, A. Hossain, K. Kim, J. Horace, B. McCall, R. Gul, L. Xu, O. V. Kopach, R. B. James

Author Affiliations +

Proceedings Volume 7805, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XII; 780507 (2010) https://doi.org/10.1117/12.861372
Event: SPIE Optical Engineering + Applications, 2010, San Diego, California, United States

Abstract

Cadmium Zinc Telluride (CZT) has attracted increasing interest with its promising potential as a room-temperature nuclear-radiation-detector material. However, different defects in CZT crystals, especially Te inclusions and dislocations, can degrade the performance of CZT detectors. Post-growth annealing is a good approach potentially to eliminate the deleterious influence of these defects. At Brookhaven National Laboratory (BNL), we built up different facilities for investigating post-growth annealing of CZT. Here, we report our latest experimental results. Cd-vapor annealing reduces the density of Te inclusions, while large temperature gradient promotes the migration of small-size Te inclusions. Simultaneously, the annealing lowers the density of dislocations. However, only-Cd-vapor annealing decreases the resistivity, possibly reflecting the introduction of extra Cd in the lattice. Subsequent Te-vapor annealing is needed to ensure the recovery of the resistivity after removing the Te inclusions.

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G. Yang, A. E. Bolotnikov, P. M. Fochuk, G. S. Camarda, Y. Cui, A. Hossain, K. Kim, J. Horace, B. McCall, R. Gul, L. Xu, O. V. Kopach, and R. B. James "Study on thermal annealing of cadmium zinc telluride (CZT) crystals", Proc. SPIE 7805, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XII, 780507 (27 August 2010); https://doi.org/10.1117/12.861372

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