Paper
27 August 2010 Reduction of leakage currents in CdZnTe-based x-ray and γ-ray detectors: a II-VI semiconductor superlattice approach
Author Affiliations +
Abstract
An approach to the fabrication of CdZnTe-based heterojunction detectors is presented with the primary goal of reducing leakage currents, permitting increased bias voltages and therefore improving x-ray and gamma-ray detector performance. The p-i-n detector architecture is theoretically superior to traditional CdZnTe detectors, and our modeling predicts that superlattice contact layers result in leakage current reductions relative to bulk semiconductor contacts. The benefits arise because the superlattices can be designed to have large carrier effective masses along the electric field direction yet a density of states less than that of a comparable bulk semiconductor.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Chang, C. H. Grein, C. R. Becker, X. J. Wang, and S. Sivananthan "Reduction of leakage currents in CdZnTe-based x-ray and γ-ray detectors: a II-VI semiconductor superlattice approach", Proc. SPIE 7805, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XII, 78050A (27 August 2010); https://doi.org/10.1117/12.862285
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Stereolithography

Sensors

Mercury cadmium telluride

Semiconductors

Electrons

Superlattices

Sensor performance

Back to Top