4 September 2010 Radiation damage studies on a 5T sCMOS image sensor with integrated readout electronics
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Proceedings Volume 7805, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XII; 78050X (2010); doi: 10.1117/12.862082
Event: SPIE Optical Engineering + Applications, 2010, San Diego, California, United States
Abstract
In this paper we present radiation studies performed on a low-noise, high-speed, largearea CMOS image sensor (CIS) based on the 0.18 μm CMOS process. The sensor has 2560(H) x 2160(V) pixels with a readout speed of 100 frames/sec and a readout noise of less than 2 e- rms. The sensor features 5T pinned photodiode pixels on a 6.5 μm pitch. In order to measure the impact of radiation exposure on the sensor performance, the device was subjected to x-ray exposure of 50 kRads of incident radiation using a broad band 50 KVP x-ray source to assess Total Ionizing Dose (TID) sensitivity. The active area and the digital control block and amplification circuitry were separately irradiated to evaluate the damage to each. Dark data was captured as a function of radiation dose in order to measure dark current and offset changes in the signal.
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Brian Rodricks, Boyd Fowler, John Lowes, Paul Vu, "Radiation damage studies on a 5T sCMOS image sensor with integrated readout electronics", Proc. SPIE 7805, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XII, 78050X (4 September 2010); doi: 10.1117/12.862082; https://doi.org/10.1117/12.862082
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KEYWORDS
Sensors

X-rays

Image sensors

Signal attenuation

Image processing

Oxides

CCD image sensors

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