3 September 2010 Study of charge transport mechanisms in ZnO-ZnTe nanojunctions
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Improved carrier transport is crucial for enhancing the performance of semiconductor devices such as radiation detectors. Conventionally, semiconductor devices employ planar p-n junctions in which carrier loss occurs mostly in the p-type and n-type diffusion regions. In a nanoscale three-dimensional (3-D) junction, the carriers can be efficiently collected cross the nanostructure by electric field distribution without trapping in the p-n regions. In addition, a nanocone junction should further improve carrier transport properties because this structure can be tailored to be completely depleted. In this work, we studied carrier transport mechanisms in nanojunctions made of vertically aligned ZnO nanostructures and ZnTe matrix using theoretical and experimental methods.
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Jun Xu, Sang Hyun Lee, Zane W. Bell, Barton Smith, X.-G. Zhang, Tong Ju, An-Jen Chen, Zhengwei Pan, "Study of charge transport mechanisms in ZnO-ZnTe nanojunctions", Proc. SPIE 7805, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XII, 78050Z (3 September 2010); doi: 10.1117/12.865607; https://doi.org/10.1117/12.865607

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