Infrared spectroscopy of thin layers under ultra-high vacuum conditions

Annemarie Pucci

doi:10.1117/12.861361

27 August 2010 Infrared spectroscopy of thin layers under ultra-high vacuum conditions

Annemarie Pucci

Proceedings Volume 7808, Infrared Remote Sensing and Instrumentation XVIII; 78080D (2010) https://doi.org/10.1117/12.861361
Event: SPIE Optical Engineering + Applications, 2010, San Diego, California, United States

Abstract

We summarize recent results from in-situ infrared spectroscopic studies of nanofilm growth. These studies, performed under ultra-high vacuum conditions with sub-monolayer sensitivity, exploited the relationship between morphology and structure on the one side and, on the other side, vibrational excitations and plasmonic ones. The studies were performed within various projects ranging from astronomy and high-energy physics to organic electronics and plasmonics. The results represent examples the description of which needs theoretical models beyond the use of Fresnel's formulae, the assumption of abrupt interfaces, and the use optical databases for bulk materials. For example, at the SiO-Si interface Si- O-Si bridges with Si-O bonds longer than in the bulk are formed which can be identified via their special vibration signals at unusually low vibration frequencies. From a thickness of about 1 nm on, the infrared spectra show typical SiObulk features. The lowered vibrational frequencies are attributed to changes in the average distribution of Si-O bond length close to the interface. On the diamond (100) surface, during Cr deposition, we observed the formation of a conducting nanocrystalline fcc phase of chromium. At a certain thickness, the nanocrystalline phase makes a phase transition to the typical bulk chromium phase. Cr is a preferred material for electric contacts in single-crystal diamond detectors the performance of which sensitively depends on the conductivity of the deposited Cr contact. On organic semiconductor layers metallization may be accompanied by an intermixing at the metal-semiconductor interface. Such intermixing can be observed as the appearance of new excitation features.

Citation Download Citation

Annemarie Pucci "Infrared spectroscopy of thin layers under ultra-high vacuum conditions", Proc. SPIE 7808, Infrared Remote Sensing and Instrumentation XVIII, 78080D (27 August 2010); https://doi.org/10.1117/12.861361

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Chromium

Interfaces

Infrared spectroscopy

Transmittance

Silicon

Calcium

Bridges

Show All Keywords

Keywords/Phrases

Search In:

Publication Years