28 August 2010 Memristor fabrication and characterization: an adaptive coded aperture imaging and sensing opportunity
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Abstract
The memristor, experimentally verified for the first time in 2008, is one of four fundamental passive circuit elements (the others being resistors, capacitors, and inductors). Development and characterization of memristor devices and the design of novel computing architectures based on these devices can potentially provide significant advances in intelligence processing systems for a variety of applications including image processing, robotics, and machine learning. In particular, adaptive coded aperture (diffraction) sensing, an emerging technology enabling real-time, wide-area IR/visible sensing and imaging, could benefit from new high performance biologically inspired image processing architectures based on memristors. In this paper, we present results from the fabrication and characterization of memristor devices utilizing titanium oxide dielectric layers in a parallel plate conuration. Two versions of memristor devices have been fabricated at the University of Dayton and the Air Force Research Laboratory utilizing varying thicknesses of the TiO2 dielectric layers. Our results show that the devices do exhibit the characteristic hysteresis loop in their I-V plots.
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Chris Yakopcic, Tarek M. Taha, Eunsung Shin, Guru Subramanyam, P. Terrence Murray, Stanley Rogers, "Memristor fabrication and characterization: an adaptive coded aperture imaging and sensing opportunity", Proc. SPIE 7818, Adaptive Coded Aperture Imaging, Non-Imaging, and Unconventional Imaging Sensor Systems II, 78180J (28 August 2010); doi: 10.1117/12.861512; https://doi.org/10.1117/12.861512
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KEYWORDS
Oxides

Titanium

Coded aperture imaging

Semiconducting wafers

Dielectrics

Image processing

Metals

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