3 December 2010 Optical properties of GexAsxSe1-2x glasses
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Proceedings Volume 7821, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V; 782109 (2010) https://doi.org/10.1117/12.882071
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, 2010, Constanta, Romania
The optical properties of amorphous GexAsxSe2-x (x=0.05÷0.30) thin films prepared by thermal evaporation on the glass substrates held at Tsubstr=100°C are reported. The transmission spectra was used for calculation of the absorption coefficient α, optical band gap Eg, and the values of the refractive index n. The dependences of α, Eg, and n on the film composition in the GexAsxSe2-x glassy system were determined. It was established that the optical band gap Eg decreases, while the refractive index n increases with the increasing of the concentration of Ge and As in the GexAsxSe2-x glassy system. The time dependence of the transmission T(t) during the light exposure for the above band gap illumination (photodarkening) is described by a strength exponential behaviour T(t)/T(0) = A0+Aexp[-(t-t0)/τ](1-β), where t is the exposure time, τ is the apparent time constant, A characterizes the exponent amplitude, t0 and A0 are the initial coordinates, and β is the dispersion parameter (0<β<1).
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Vasile Benea, Mihail Iovu, Eduard Colomeico, Maria Iovu, Ion Cojocaru, Oleh Shpotyuk, "Optical properties of GexAsxSe1-2x glasses", Proc. SPIE 7821, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V, 782109 (3 December 2010); doi: 10.1117/12.882071; https://doi.org/10.1117/12.882071

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