4 December 2010 MEMS switch for 60 GHz band
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Proceedings Volume 7821, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V; 78210O (2010); doi: 10.1117/12.881775
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, 2010, Constanta, Romania
The aim of this work was to develop a new MEMS switch structure for millimeter wave applications, which can be integrated with other more complex devices for developing of reconfigurable filters or antennae for microwave or millimeter wave frequency range. Electrostatic force was chosen for the switching operation, which seams to be the only way to obtain high reliable and wafer scale manufacturing techniques at these frequencies. Different geometries of the switching element were designed and manufactured in order to study the mechanical stability of these structures; the measured actuation voltage, of about 24,5V, shows an acceptable value for the further applications. Measured and simulated results of these structures (insertion losses of about 0.75dB@60GHz and isolation >50dB@60GHz) were in good agreement and are promising for further applications in this frequency range.
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D. Vasilache, G. Constantinidis, M. Dragoman, A. Takacs, F. Vladoianu, T. Kostopoulos, G. Boldeiu, V. Moagar, Catalin Tibeica, L. Bary, R. Plana, "MEMS switch for 60 GHz band", Proc. SPIE 7821, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V, 78210O (4 December 2010); doi: 10.1117/12.881775; https://doi.org/10.1117/12.881775



Microelectromechanical systems


Optics manufacturing

Extremely high frequency

Semiconducting wafers

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