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3 December 2010 Al-doped ZnO nanocoatings obtained by sol-gel route
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Proceedings Volume 7821, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V; 78211D (2010) https://doi.org/10.1117/12.882301
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, 2010, Constanta, Romania
Abstract
In recent years aluminum doped zinc oxide (AZO) film has attracted more attention due to many advantages including low cost, non-toxicity, and high stability to H2 plasma in comparison with indium tin oxide (ITO) film, the best known and used transparent conductive oxide (TCO) film. In this work, mono and multilayer Al-doped ZnO coatings have been obtained by dip coating sol-gel method on the glass and silicon supports. X-ray Diffraction, Atomic Force Microscopy (AFM) and Fluorescence Spectroscopy were used for the structural, morphological and optical characterization of the obtained coatings. The multilayer Al-doped ZnO coatings (after five layer depositions) on the silicon substrate present a polycrystalline wurtzite type structure with crystallite size of 20 nm. The AFM measurements have shown that no matter the support type, the Al-doped ZnO coatings present a similar morphology consisting in a smooth distribution of the circular grains leading also to similar values of the RMS roughness, around 2 nm. The photoluminescence properties of the Al-doped ZnO coatings depend on the number of depositions and type of substrate. Systematic study performed allows finding most suitable parameters for obtaining coatings with desired properties.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Mihaiu, A. Toader, I. Atkinson, M. Anastasescu, M. Vasilescu, M. Zaharescu, and R. Plugaru "Al-doped ZnO nanocoatings obtained by sol-gel route", Proc. SPIE 7821, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V, 78211D (3 December 2010); https://doi.org/10.1117/12.882301
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