8 December 2010 Density of impurity states in coaxial GaAs/AlGaAs quantum well wires under non-resonant intense laser fields
Author Affiliations +
Proceedings Volume 7821, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V; 78211G (2010); doi: 10.1117/12.882192
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, 2010, Constanta, Romania
Abstract
Precise laser-dressing effects are considered for both the confinement potential of the coaxial cylindrical quantum well wires and the Coulomb potential of the impurities. The computation of the ground state subband energy eigenfunctions for different laser field parameters is based on the finite element method. Significant changes of the electron probability density under intense laser field are predicted. The binding energies of the shallow-donor impurities are variationally calculated within the effective-mass approximation. The study reveals that the laser field competes with the quantum confinement and breaks down the degeneracy of states for donors symmetrically positioned within the coaxial nanowires. A proper interpretation of the density of impurity states is considered to be essential for controlling the optoelectronic properties of doped semiconductor quantum well wires.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Radu, "Density of impurity states in coaxial GaAs/AlGaAs quantum well wires under non-resonant intense laser fields", Proc. SPIE 7821, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V, 78211G (8 December 2010); doi: 10.1117/12.882192; https://doi.org/10.1117/12.882192
PROCEEDINGS
10 PAGES


SHARE
KEYWORDS
Quantum wells

Laser phosphor displays

Distributed interactive simulations

Semiconductors

Terahertz radiation

Finite element methods

Magnetism

Back to Top