8 December 2010 Main noise characteristics for MOS Hall plates
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Proceedings Volume 7821, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V; 78211X (2010); doi: 10.1117/12.882365
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, 2010, Constanta, Romania
Abstract
In this paperwork based on the adequate models it is analysed the operating conditions, and are established the noise main characteristic for MOS Hall plates. By using the numerical simulation the values of the signal-to-noise ratio and the noise-equivalent magnetic induction for different structure devices are compared and it is also emphasized the way in which choosing the geometry and the material features allows getting high-performance sensors.
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George Căruntu, Cornel Panait, "Main noise characteristics for MOS Hall plates", Proc. SPIE 7821, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V, 78211X (8 December 2010); doi: 10.1117/12.882365; https://doi.org/10.1117/12.882365
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KEYWORDS
Magnetism

Signal to noise ratio

Molybdenum

Magnetic sensors

Field effect transistors

Gallium arsenide

Resistance

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