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24 September 2010 Resist process windows in electron-beam lithography
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Abstract
High resolution sub resolution assist features (SRAFs) are challenging to pattern, especially on photomasks with pattern density variations and beam corrections. This paper presents analysis techniques of SRAF resist resolution performance and manufacturing robustness. Electron beam proximity effects and their correction methods impact aerial image quality. Resist resolution and LER depend strongly on the aerial image, and these effects will be looked at theoretically and experimentally with CDSEM and reflected die-to-die inspection techniques. A quantitative understanding of resolution process latitude is important in SRAF patterning, especially when one considers beam corrections that are used to compensate for effects like electron fogging and etch loading.
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Andrew T. Jamieson, Nathan Wilcox, Wai Y. Kwok, and Yong Kwan Kim "Resist process windows in electron-beam lithography", Proc. SPIE 7823, Photomask Technology 2010, 78230B (24 September 2010); https://doi.org/10.1117/12.868037
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