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29 September 2010 Advanced binary film for 193nm lithography extension to sub-32-nm node
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The proportion of mask fabrication in the total cost budget for IC production is increasing, particularly for the double patterning generation. Prolonging mask lifetime is very effective in reducing the total mask cost. The factors shortening the mask lifetime principally damage by cleaning and by 193nm excimer laser irradiation during wafer exposure. In order to solve these issues, Advanced Binary Film (ABF) was developed that is more durable against 193nm irradiation during wafer exposure, and has superior cleaning durability. We confirmed the dry etching characteristics of the ABF, using 100nm thick Chemically Amplified Resist and exposure by 50keV EB tool. We obtained impressive results from the ABF evaluation, through cycle cleaning tests (simulating cleaning during pellicle re-mounting), ArF irradiation damage and the effects on Critical Dimension changes.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Osamu Nozawa, Hiroaki Shishido, Masahiro Hashimoto, Yasushi Ohkubo, and Hideaki Mitsui "Advanced binary film for 193nm lithography extension to sub-32-nm node", Proc. SPIE 7823, Photomask Technology 2010, 78230K (29 September 2010);

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