29 September 2010 Inspection of advanced computational lithography logic reticles using a 193-nm inspection system
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Abstract
We report inspection results of early 22-nm logic reticles designed with both conventional and computational lithography methods. Inspection is performed using a state-of-the-art 193-nm reticle inspection system in the reticleplane inspection mode (RPI) where both rule-based sensitivity control (RSC) and a newer modelbased sensitivity control (MSC) method are tested. The evaluation includes defect detection performance using several special test reticles designed with both conventional and computational lithography methods; the reticles contain a variety of programmed critical defects which are measured based on wafer print impact. Also included are inspection results from several full-field product reticles designed with both conventional and computational lithography methods to determine if low nuisance-defect counts can be achieved. These early reticles are largely single-die and all inspections are performed in the die-to-database inspection mode only.
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Ching-Fang Yu, Ching-Fang Yu, Mei-Chun Lin, Mei-Chun Lin, Mei-Tsu Lai, Mei-Tsu Lai, Luke T.H. Hsu, Luke T.H. Hsu, Angus Chin, Angus Chin, S. C. Lee, S. C. Lee, Anthony Yen, Anthony Yen, Jim Wang, Jim Wang, Ellison Chen, Ellison Chen, David Wu, David Wu, William H. Broadbent, William H. Broadbent, William Huang, William Huang, Zinggang Zhu, Zinggang Zhu, } "Inspection of advanced computational lithography logic reticles using a 193-nm inspection system", Proc. SPIE 7823, Photomask Technology 2010, 78232F (29 September 2010); doi: 10.1117/12.865604; https://doi.org/10.1117/12.865604
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