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29 September 2010 Mask process correction (MPC) modeling and its application to EUV mask for electron beam mask writer EBM-7000
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Abstract
In electron beam writing on EUV mask, it has been reported that CD linearity does not show simple signatures as observed with conventional COG (Cr on Glass) masks because they are caused by scattered electrons form EUV mask itself which comprises stacked heavy metals and thick multi-layers. To resolve this issue, Mask Process Correction (MPC) will be ideally applicable. Every pattern is reshaped in MPC. Therefore, the number of shots would not increase and writing time will be kept within reasonable range. In this paper, MPC is extended to modeling for correction of CD linearity errors on EUV mask. And its effectiveness is verified with simulations and experiments through actual writing test.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Kamikubo, Takayuki Ohnishi, Shigehiro Hara, Hirohito Anze, Yoshiaki Hattori, Shuichi Tamamushi, Shufeng Bai, Jen-Shiang Wang, Rafael Howell, George Chen, Jiangwei Li, Jun Tao, Jim Wiley, Terunobu Kurosawa, Yasuko Saito, and Tadahiro Takigawa "Mask process correction (MPC) modeling and its application to EUV mask for electron beam mask writer EBM-7000", Proc. SPIE 7823, Photomask Technology 2010, 782331 (29 September 2010); https://doi.org/10.1117/12.865822
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