29 September 2010 Mask process correction (MPC) modeling and its application to EUV mask for electron beam mask writer EBM-7000
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Abstract
In electron beam writing on EUV mask, it has been reported that CD linearity does not show simple signatures as observed with conventional COG (Cr on Glass) masks because they are caused by scattered electrons form EUV mask itself which comprises stacked heavy metals and thick multi-layers. To resolve this issue, Mask Process Correction (MPC) will be ideally applicable. Every pattern is reshaped in MPC. Therefore, the number of shots would not increase and writing time will be kept within reasonable range. In this paper, MPC is extended to modeling for correction of CD linearity errors on EUV mask. And its effectiveness is verified with simulations and experiments through actual writing test.
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Takashi Kamikubo, Takashi Kamikubo, Takayuki Ohnishi, Takayuki Ohnishi, Shigehiro Hara, Shigehiro Hara, Hirohito Anze, Hirohito Anze, Yoshiaki Hattori, Yoshiaki Hattori, Shuichi Tamamushi, Shuichi Tamamushi, Shufeng Bai, Shufeng Bai, Jen-Shiang Wang, Jen-Shiang Wang, Rafael Howell, Rafael Howell, George Chen, George Chen, Jiangwei Li, Jiangwei Li, Jun Tao, Jun Tao, Jim Wiley, Jim Wiley, Terunobu Kurosawa, Terunobu Kurosawa, Yasuko Saito, Yasuko Saito, Tadahiro Takigawa, Tadahiro Takigawa, } "Mask process correction (MPC) modeling and its application to EUV mask for electron beam mask writer EBM-7000", Proc. SPIE 7823, Photomask Technology 2010, 782331 (29 September 2010); doi: 10.1117/12.865822; https://doi.org/10.1117/12.865822
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