24 September 2010 Substrate aware OPC rules for edge effect in block levels
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Implant level photolithography processes are becoming more challenging each node due to everdecreasing CD and resist edge placement requirements, and the technical challenge is exacerbated by the business need to develop and maintain low-cost processes. Optical Proximity Correction (OPC) using models created based on data from plain silicon substrate is not able to accommodate the various real device/design scenarios due to substrate pattern effects. In this paper, we show our systematic study on substrate effect (RX/STI) on implant level lithography CD printing. We also explain the CD variation mechanism and validate by simulation using well calibrated physical resist model. Based on the results, we propose an approach to generate substrate-aware OPC rules to correct for such substrate effects.
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Dongbing Shao, Dongbing Shao, Todd C. Bailey, Todd C. Bailey, Ian Stobert, Ian Stobert, Irene Popova, Irene Popova, Chan Sam Chang, Chan Sam Chang, "Substrate aware OPC rules for edge effect in block levels", Proc. SPIE 7823, Photomask Technology 2010, 78233U (24 September 2010); doi: 10.1117/12.865134; https://doi.org/10.1117/12.865134

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