Analytical modeling of MTF and QE of CCD and CMOS image sensors

Ibrahima Djité; Pierre Magnan; Magali Estribeau; Guy Rolland; Sophie Petit; Olivier Saint-pé

doi:10.1117/12.868339

13 October 2010 Analytical modeling of MTF and QE of CCD and CMOS image sensors

Ibrahima Djité, Pierre Magnan, Magali Estribeau, Guy Rolland, Sophie Petit, Olivier Saint-pé

Proceedings Volume 7826, Sensors, Systems, and Next-Generation Satellites XIV; 78261O (2010) https://doi.org/10.1117/12.868339
Event: SPIE Remote Sensing, 2010, Toulouse, France

Abstract

Today, CCD and CMOS image sensors have found many applications in general public domains. However their use for scientific and space applications requires high electro optical performances and strong abilities to predict them prior to the image sensors design and conception. Sensitivity and image quality are two important electro-optical characteristics for an image sensor. The Quantum Efficiency (QE) and the Modulation Transfer Function (MTF) are respectively the common metrics used to quantify them. Because of an important number of parameters influencing the MTF and the QE, their analytical calculation is not an easy task. This paper describes an analytical model of MTF and QE of CCD and CMOS image sensors. The model has been developed in order to take into account a maximum number of parameters: pixel size, photosensitive area size and shape, EPI-layer and substrate doping concentration, junction depth. The effect of top layer oxide stacks on the resulting optical transmission coefficient and so on QE can also be taken into account. The study is established in the case of CMOS photodiode pixels and buried channel CCD pixels. The MTF and QE modeling results are compared with experimental results. MTF and QE measurements are realized on different pixels types having different photosensitive area shapes and using different technologies. A part of these measurements are performed on a frontside-illuminated CMOS sensor and on a thinned backside-illuminated CMOS image sensor, both of them are manufactured using CMOS technology dedicated to image sensors. The other part of MTF and QE measurements are performed on thinned backside-illuminated N-buried channel CCD sensor. Finally the MTF and QE models are used to make performance predictions, and the effects of various parameters on the MTF and the QE are discussed.

Citation Download Citation

Ibrahima Djité, Pierre Magnan, Magali Estribeau, Guy Rolland, Sophie Petit, and Olivier Saint-pé "Analytical modeling of MTF and QE of CCD and CMOS image sensors", Proc. SPIE 7826, Sensors, Systems, and Next-Generation Satellites XIV, 78261O (13 October 2010); https://doi.org/10.1117/12.868339

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