13 October 2010 Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes
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Abstract
This paper presents a summary of the main results we observed after several years of study on irradiated custom imagers manufactured using 0.18 μm CMOS processes dedicated to imaging. These results are compared to irradiated commercial sensor test results provided by the Jet Propulsion Laboratory to enlighten the differences between standard and pinned photodiode behaviors. Several types of energetic particles have been used (gamma rays, X-rays, protons and neutrons) to irradiate the studied devices. Both total ionizing dose (TID) and displacement damage effects are reported. The most sensitive parameter is still the dark current but some quantum efficiency and MOSFET characteristics changes were also observed at higher dose than those of interest for space applications. In all these degradations, the trench isolations play an important role. The consequences on radiation testing for space applications and radiation-hardening-by-design techniques are also discussed.
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Vincent Goiffon, Vincent Goiffon, Cédric Virmontois, Cédric Virmontois, Pierre Magnan, Pierre Magnan, Paola Cervantes, Paola Cervantes, Franck Corbière, Franck Corbière, Magali Estribeau, Magali Estribeau, Philippe Pinel, Philippe Pinel, } "Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes", Proc. SPIE 7826, Sensors, Systems, and Next-Generation Satellites XIV, 78261S (13 October 2010); doi: 10.1117/12.868443; https://doi.org/10.1117/12.868443
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