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27 October 2010 MCT (HgCdTe) IR detectors: latest developments in France
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This paper presents an overview of the very recent developments of the MCT infrared detector technology developed by CEA-LETI and Sofradir in France. New applications require high sensitivity, higher operating temperature and dual band detectors. The standard n on p technology in production at Sofradir for 25 years is well mastered with an extremely robust and reliable process. Sofradir's interest in p on n technology opens the perspective of reducing dark current of diodes so detectors could operate in lower flux or higher operating temperature. In parallel, MCT Avalanche Photo Diodes (APD) have demonstrated ideal performances for low flux and high speed application like laser gated imaging during the last few years. This technology also opens new prospects on next generation of imaging detectors for compact, low flux and low power applications. Regarding 3rd Gen IR detectors, the development of dual-band infrared detectors has been the core of intense research and technological improvements for the last ten years. New TV (640 x 512 pixels) format MWIR/LWIR detectors on 20μm pixel pitch, made from Molecular Beam Epitaxy, has been developed with dedicated Read-Out Integrated Circuit (ROIC) for real simultaneous detection and maximum SNR. Technological and products achievements, as well as latest results and performances are presented outlining the availability of p/n, avalanche photodiodes and dual band technologies for new applications at system level.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yann Reibel, Laurent Rubaldo, Cedric Vaz, Philippe Tribolet, Nicolas Baier, and Gérard Destefanis "MCT (HgCdTe) IR detectors: latest developments in France", Proc. SPIE 7834, Electro-Optical and Infrared Systems: Technology and Applications VII, 78340M (27 October 2010);


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