3 November 2010 Mixed-signal 0.18μm CMOS and SiGe BiCMOS foundry technologies for ROIC applications
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Abstract
Today's readout integrated-circuits (ROICs) require a high level of integration of high performance analog and low power digital logic. TowerJazz offers a commercial 0.18μm CMOS technology platform for mixed-signal, RF, and high performance analog applications which can be used for ROIC applications. The commercial CA18HD dual gate oxide 1.8V/3.3V and CA18HA dual gate oxide 1.8V/5V RF/mixed signal processes, consisting of six layers of metallization, have high density stacked linear MIM capacitors, high-value resistors, triple-well isolation and thick top aluminum metal. The CA18HA process also has scalable drain extended LDMOS devices, up to 40V Vds, for high-voltage sensor applications, and high-performance bipolars for low noise requirements in ROICs. Also discussed are the available features of the commercial SBC18 SiGe BiCMOS platform with SiGe NPNs operating up to 200/200GHz (fT/fMAX frequencies in manufacturing and demonstrated to 270 GHz fT, for reduced noise and integrated RF capabilities which could be used in ROICs. Implementation of these technologies in a thick film SOI process for integrated RF switch and power management and the availability of high fT vertical PNPs to enable complementary BiCMOS (CBiCMOS), for RF enabled ROICs, are also described in this paper.
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Arjun Kar-Roy, David Howard, Marco Racanelli, Mike Scott, Paul Hurwitz, Robert Zwingman, Samir Chaudhry, and Scott Jordan "Mixed-signal 0.18μm CMOS and SiGe BiCMOS foundry technologies for ROIC applications", Proc. SPIE 7834, Electro-Optical and Infrared Systems: Technology and Applications VII, 78340R (3 November 2010); doi: 10.1117/12.865173; https://doi.org/10.1117/12.865173
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