26 October 2010 Collection of photogenerated charge carriers in small-pitched infrared photovoltaic focal plane arrays
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Abstract
Technology of infrared (IR) photovoltaic (PV) focal plane arrays (FPA) covering spectral range from 1.6 to 14 μm gradually moves from simple quasi-matrix (linear) arrays like as 4×288 pixels to large format high definition arrays 1280×1024 pixels and more. Major infrared detector materials for PV technology are InSb and its alloys and ternary alloys Hg1-xCdxTe. Progress in IR PV technology was provided in last decade by serious improvement in material growing techniques. Increasing of PV array format is related always to decreasing of pixel size and spacing between neighbor pixels to minimal size reasonable from point of view of infrared physics. So pitch is small (15-25 μm) in large format arrays. Ambipolar diffusion length of photogenerated charge carriers can exceed pitch many times in high quality absorption layers of PV arrays. It means that each pixel can collect excess charge carriers generated far from n+-p junction border. Optimization of resolution, filling factor and cross-talking level of small-pitched PV FPA requires comprehensive estimation of photodiode's (PD) pixel performance depending on pixel and array design, material properties and operating conditions. Objective of the present work was to develop general approach to estimate collection of photogenerated charge carriers in small-pitched arrays.
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Galina V. Chekanova, Albina A. Drugova, Viacheslav Kholodnov, and Mikhail S. Nikitin "Collection of photogenerated charge carriers in small-pitched infrared photovoltaic focal plane arrays", Proc. SPIE 7834, Electro-Optical and Infrared Systems: Technology and Applications VII, 783410 (26 October 2010); doi: 10.1117/12.864311; https://doi.org/10.1117/12.864311
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