20 October 2010 Time-domain analysis of sub-micron transit region GaAs Gunn diodes for use in terahertz frequency multiplication chains
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Proceedings Volume 7837, Millimetre Wave and Terahertz Sensors and Technology III; 783702 (2010); doi: 10.1117/12.864872
Event: SPIE Security + Defence, 2010, Toulouse, France
Abstract
Simulated RF time-domain characteristics for advanced Gunn diodes with hot electron injection and sub-micron transit region lengths for use at frequencies over 100GHz are reported. The physical models used have been developed in SILVACO and are compared to measured results. The devices measured were originally fabricated to investigate the feasibility of GaAs Gunn diode oscillators capable of operating at D-band frequencies and ultimately intended for use in high power (multi-mW) Terahertz sources (~0.6THz) when used in conjunction with novel Schottky diode frequency multiplier technology. The device models created using SILVACO are described and the DC and time-domain results presented. The simulations were used to determine the shortest transit region length capable of producing sustained oscillation. The operation of resonant disk second harmonic Gunn diode oscillators is also discussed and accurate electromagnetic models created using Ansoft High Frequency Structure Simulator presented. Novel methods for combining small-signal frequency-domain electromagnetic simulations with time-domain device simulations in order to account for the significant interactions between the diode and oscillator circuit are described.
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F. Amir, N. Farrington, C. Mitchell, M. Missous, "Time-domain analysis of sub-micron transit region GaAs Gunn diodes for use in terahertz frequency multiplication chains", Proc. SPIE 7837, Millimetre Wave and Terahertz Sensors and Technology III, 783702 (20 October 2010); doi: 10.1117/12.864872; https://doi.org/10.1117/12.864872
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KEYWORDS
Diodes

Oscillators

Gallium arsenide

Instrument modeling

Device simulation

Modeling

Monte Carlo methods

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