20 October 2010 THz imaging with low-cost 130 nm CMOS transistors
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Abstract
We report on active imaging with CMOS transistors at 300 GHz and 1.05 THz. Two basic focal plane arrays consisting of nMOS transistors and wide-band bow-tie antennas have been implemented in a low-cost 130 nm CMOS technology. Raster scan imaging of objects concealed in a paper envelope has been achieved at 300 GHz with a commercial radiation source. The images clearly reveal the concealed objects with a dynamic range of 35 dB and a resolution of 3 mm. At 1.05 THz, the pixels achieve a responsivity of 50 V/W and a noise equivalent power of 900 pW/Hz0.5.
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Franz Schuster, Franz Schuster, Maciej Sakowicz, Maciej Sakowicz, Alexandre Siligaris, Alexandre Siligaris, Laurent Dussopt, Laurent Dussopt, Hadley Videlier, Hadley Videlier, Dominique Coquillat, Dominique Coquillat, Frédéric Teppe, Frédéric Teppe, Benoît Giffard, Benoît Giffard, Adrien Dobroiu, Adrien Dobroiu, Thomas Skotnicki, Thomas Skotnicki, Wojciech Knap, Wojciech Knap, } "THz imaging with low-cost 130 nm CMOS transistors", Proc. SPIE 7837, Millimetre Wave and Terahertz Sensors and Technology III, 783704 (20 October 2010); doi: 10.1117/12.864877; https://doi.org/10.1117/12.864877
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