Quantum confinement on the carrier contribution to the elastic constants in nonlinear optical and optoelectronic materials

Subhamoy Singha Roy

doi:10.1117/12.864432

12 October 2010 Quantum confinement on the carrier contribution to the elastic constants in nonlinear optical and optoelectronic materials

Subhamoy Singha Roy

Author Affiliations +

Proceedings Volume 7838, Optics and Photonics for Counterterrorism and Crime Fighting VI and Optical Materials in Defence Systems Technology VII; 78381F (2010) https://doi.org/10.1117/12.864432
Event: SPIE Security + Defence, 2010, Toulouse, France

Abstract

An attempt is made to study the carrier contribution to the elastic constants in QWs and QWWs of II-V , IV-VI, III-V, ternary and quaternary types of optoelectronic compounds. It has been found, taking QWs and QWWs of CdGeAs2, InAs, Hg1-xCdxTe, In1-xGaxAsyP1-y lattice matched to InP, CdS and PbSe as examples for numerical computations that the second and third order elastic constants increase with increasing carrier degeneracy and decreasing film thickness respectively in various oscillatory manners emphasizing the influence of dimensional quantizations and the energy band constants in different cases. An experimental method of determining the said contribution in QWs and QWWs having arbitrary dispersion laws has also been suggested and the present simplified analysis is in agreement with the suggested relationship. The well-known results for widegap materials having nondegenerate electron concentration have also been obtained as special cases of our generalized theory under certain limiting conditions.

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Subhamoy Singha Roy "Quantum confinement on the carrier contribution to the elastic constants in nonlinear optical and optoelectronic materials", Proc. SPIE 7838, Optics and Photonics for Counterterrorism and Crime Fighting VI and Optical Materials in Defence Systems Technology VII, 78381F (12 October 2010); https://doi.org/10.1117/12.864432

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