17 November 2010 Laser doping of phosphorous in grooved silicone surface
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Proceedings Volume 7843, High-Power Lasers and Applications V; 78431Z (2010); doi: 10.1117/12.870628
Event: Photonics Asia 2010, 2010, Beijing, China
Abstract
Among various trials on improving energy conversion efficiency of silicone based photo-voltaic cell, laser doping casts promising future. Several research groups are suggesting their own methods for laser doping. Usually, doping laser is injected inside of narrow phosphoric acid jet. The injected beam propagates through the jet and it grooves surface of silicone cell. The laser energy also heats the silicone surface and phosphorous is penetrated through the surface. In this work, we separate the grooving laser and heating laser. The silicone surface was grooved by a pulsed fiber laser. The spot size of the laser was 50 μm. For surface measurement, grooved with of 200 μm was needed. To have the groove width, we scanned the laser several times. SEM image of the grooved surface showed ripple of the surface. The phosphoric acid was sprayed on the grooved surface. A fiber coupled cw diode laser heated the sprayed Si surface. After heating, the Si was washed thoroughly by deionized water. The depth profile of penetrated phosphorous was examined by using SIMS. The profile indicated that phosphorous was penetrated about 50 nm. Four point measurement of surface resistance also indicated successful laser doping.
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Kwangwon Lee, Sangyoon Bae, Youngjung Kim, MinSu Jeon, JaEik Lee, JeongEui Hong, Young-Gull Joh, Jonghoon Yi, "Laser doping of phosphorous in grooved silicone surface", Proc. SPIE 7843, High-Power Lasers and Applications V, 78431Z (17 November 2010); doi: 10.1117/12.870628; https://doi.org/10.1117/12.870628
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KEYWORDS
Silicon

Semiconductor lasers

Doping

Semiconducting wafers

Resistance

Scanning electron microscopy

Laser optics

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