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12 November 2010 Intracavity second harmonic generation characteristics of semiconductor disk laser
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Abstract
The Optically pumped semiconductor disk laser use the InGaAs/GaAs quantum structures as the gain medium, and optically pumped at 808 nm by the Laser Diode. We have got the fundamental output at 1030 nm, and its highest output power is about 60 mW. Then, in straight cavity, we used LBO, KTP, KNbO3 as second harmonic generation crystal respectively, and obtain the green laser with maximum power of 8 mW. In folding cavity, we employed LBO as second harmonic generation crystal and got the laser at 515 nm with it's maximum power is 11mW. The characteristics of these crystals were discussed. Finally, we simulated the heat distribution of the gain chip by finite-element analysis method, and some measures of improving heat spread and output efficiency of the semiconductor chip.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zili Li, Yanrong Song, Peng Zhang, and Xiao Zhang "Intracavity second harmonic generation characteristics of semiconductor disk laser", Proc. SPIE 7844, Semiconductor Lasers and Applications IV, 78440M (12 November 2010); https://doi.org/10.1117/12.869391
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