Paper
12 November 2010 Analysis of strain energy in nanowire heterostructures with component gradient buffer section
Yang Liu, Xian Ye, Hui Huang, Jingwei Guo, Xiaomin Ren, Yongqing Huang
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Abstract
In this paper, analytical method is employed to analyze the system strain energy and critical diameter of one kind of longitudinally heterostructure nanowire which contains component gradient buffer sections. Based on the critical diameter model of F. Glas in heterostructure nonawires, calculation has been made to research on how does single-layer thickness and total thickness of gradient buffer effect the critical radius of the system. The results illustrate that component gradient buffer layer can effectively reduce the system strain energy, and the thinner the single-layer buffer section thickness , the more obvious the improvement of its critical radius; if the lattice mismatch of the heterostructure nonawires is smaller, the strain energy can be reduced more significantly, also the greater rate of increase of its critical radius. The freedom cut of the nonawires diameter can be realized by controlling the component and thickness of buffer sections. Using Au assistant MOVCD method, we can get high-quality nonawires with component gradient buffer sections, in contrast to the bad quality SEM image of the nonawires without buffer layers, which effectively prove the above conclusions.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yang Liu, Xian Ye, Hui Huang, Jingwei Guo, Xiaomin Ren, and Yongqing Huang "Analysis of strain energy in nanowire heterostructures with component gradient buffer section", Proc. SPIE 7844, Semiconductor Lasers and Applications IV, 78440S (12 November 2010); https://doi.org/10.1117/12.870267
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KEYWORDS
Heterojunctions

Crystals

Gallium arsenide

Nanowires

Indium arsenide

Scanning electron microscopy

Image quality

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