12 November 2010 The theoretical research of the carriers distribution in the semiconductor quantum dot
Author Affiliations +
Abstract
The carriers' distribution of the semiconductor quantum dots are investigated by a rate equation method in this paper. The inhomogeneous broadening of quantum dot's size is considered with a Gaussian distribution. Carrier distribution between different quantum dots size are coupled via the carrier density in the wetting layer, carriers can be captures into the quantum dot energy levels from the wetting layer as well as thermal escaping in reverse, the relaxation effect of the carriers between the different energy level in the same quantum dot is also considered. So a detailed balance between capture and re-emission is established in the different size quantum dot. The carrier dynamics are discussed in the moment paper.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Zhao, C. Zhao, M. Zhao, M. Zhao, Y. Wang, Y. Wang, Y. Cao, Y. Cao, A. J. Lv, A. J. Lv, X. L. Liu, X. L. Liu, G. J. Xing, G. J. Xing, } "The theoretical research of the carriers distribution in the semiconductor quantum dot", Proc. SPIE 7844, Semiconductor Lasers and Applications IV, 78441G (12 November 2010); doi: 10.1117/12.868557; https://doi.org/10.1117/12.868557
PROCEEDINGS
5 PAGES


SHARE
Back to Top