9 December 2010 Discussion of damage induced by trigger light pulse at high repetition frequencies in semi-insulating GaAs PCSS's materials
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Abstract
Based on the analysis of temperature field generated when semi-insulating GaAs photoconductive switch irradiated by light pulse, the paper focuses on the light damage induced by nanosecond laser pulse with 1.06μm wavelength at high repetition frequencies in switch materials. On the basis of the thermal conduction theory, the transient temperature field in the materials is simulated in a computer by using the finite difference method, the main reasons of damage induced by laser in chip material are analyzed according to simulation results and experimental results of the damage test, and the damage mechanism is discussed.
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Huiying Dai, Huiying Dai, Xiang Shan, Xiang Shan, Wei Shi, Wei Shi, } "Discussion of damage induced by trigger light pulse at high repetition frequencies in semi-insulating GaAs PCSS's materials", Proc. SPIE 7844, Semiconductor Lasers and Applications IV, 78441I (9 December 2010); doi: 10.1117/12.868891; https://doi.org/10.1117/12.868891
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